Chemical-Mechanical polishing of parylene- n films: evaluation by X-Ray photoelectron spectroscopy and atomic force microscopy |
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| Authors: | G -R Yang Y -P Zhao Jan M Neirynck Shyam P Murarka Ronald J Gutmann |
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| Affiliation: | (1) Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, 12180 Troy, NY;(2) Department of Physics, Applied Physics, and Astronomy, USA;(3) Department of Electrical, Computer, and Systems Engineering, USA;(4) Department of Material Science and Engineering, USA |
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| Abstract: | The surface quality of parylene-N(PA-N) films, as determined by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy
(AFM), after chemical-mechanical polishing (CMP), is influenced mostly by two factors: quality of the as-deposited film and
the slurry composition. The higher the quality of the as-deposited film (more specifically, less oxygen content), the higher
the quality of the polished film. The XPS and AFM results show that PA-N film polished in 1% A12O3 abrasive (0.3 Μm particles), NH4OH (2% by volume), and water, has better quality compared to the other slurries investigated. With high quality PA-N films,
the film surface quality affected by CMP is relatively independent of polishing time, indicating that changes in surface chemistry
occur in the initial seconds of polishing. |
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| Keywords: | Atomic force microscopy (AFM) chemical-mechanical polishing (CMP) parylene-N films x-ray photoelectron spectroscopy (XPS) |
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