| 背腐蚀法分离p-n结的研究 |
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| 引用本文： | 刘志刚,孙铁囤,苦史伟,罗培青,姜维,徐秀琴,崔容强.背腐蚀法分离p-n结的研究[J].太阳能学报,2007,28(2):165-168. |
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| 作者姓名： | 刘志刚 孙铁囤 苦史伟 罗培青 姜维 徐秀琴 崔容强 |
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| 作者单位： | 上海交通大学太阳能研究所,上海,200240 |
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| 摘 要： | 采用正面无保护的背腐蚀方法分离p-n结,用SEM图观察了背腐蚀后硅片表面形貌的变化,对背腐蚀与刻边分离p-n结样品的光生电动势进行了比较,用能带理论对其差别做了深入的解释。
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| 关 键 词： | 背腐蚀 光生电动势 能带 |
| 文章编号： | 0254-0096（2007）02-0165-04 |
| 修稿时间： | 2005-08-23 |
STUDY ON THE p-n JUNCTION SEPARATION BY BACK ETCHING |
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| Liu Zhigang,Sun Tietun,Ku Shiwei,Luo Peiqing,Jiang Wei,Xu Xiuqin,Cui Rongqiang.STUDY ON THE p-n JUNCTION SEPARATION BY BACK ETCHING[J].Acta Energiae Solaris Sinica,2007,28(2):165-168. |
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| Authors: | Liu Zhigang Sun Tietun Ku Shiwei Luo Peiqing Jiang Wei Xu Xiuqin Cui Rongqiang |
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| Affiliation: | Solar Energy Institute, Shanghai Jiaotong University, Shanghai 200240, China |
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| Abstract: | Separating p-n junction by using of back etching method without surface protect was studied, also the surface by SEM pictures. The photo-induced voltage between the back etching and edge etching silicon were compared, explaining the difference by means of the theory of energy bands. |
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| Keywords: | back etching photo-induced voltage energy bands |
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