反应溅射制备的a-A12O3薄膜中的时效过程

用反应溅射方法制备了非晶氧化铝薄膜，以Al/a-Al2O3/Al电容器为载体，研究了此种电容器的电容量，随样品放置时间的衰减过程及其影响因素，结论如下：（1）同一样品，高频下测得的电容随样品旋转时间而变小的趋势相对于低频值要缓慢。（2）其它条件相同时，低的工作气压下形成的样品，其电容量不易随时间而改变。（3）真空中的低温热处理有助于改善时效过程。（4）时效的机制可能是样品中亚稳态的缺陷逐渐消失。这些缺陷跟缺氧和吸水没有必然联系，也不太可能是Al2O3/Al的界面缺陷；它们的消失跟电老化也无必然联系。机制之一可能是氧过量引起的铝离子过配位的逐渐消失。

The aging procedure in amorphous alumina film fabricated by reactive sputtering

Amorphous alumina films with thickness about 50nm are fabricated by reactive sputtering in Ar and O2 mixture. It is found that the Al/a-Al2O3/Al capacitor is always with the so-called time-effect i. e. , aging procedure, namely, its capacitance decreases with time. This effect, along with the factors affecting it is investigated. And conclusions were drawn as followings: (1) The tendency of the decreasing of capacitance, for higher testing frequency, is more flattened, (2) Samples formed under lower working pressure always have capacitance values that show little dependence of time. (3) The mechanism for the decay of capacitance is mostly due to the defects lying in the specimen which are not likely resulted from the absence of oxygen or from the moisture absorbed in the specimen and not likely from the aluminum/alumina interface. Also, the vanishing of the defects can not come from the electric-fatigue.