| 基于GaAs/AlGaAs量子阱材料的光致折射率分析 |
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| 引用本文： | 李龙志,杨建义,王明华,江晓清.基于GaAs/AlGaAs量子阱材料的光致折射率分析[J].光学仪器,2005,27(5):136-140. |
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| 作者姓名： | 李龙志 杨建义 王明华 江晓清 |
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| 作者单位： | 浙江大学信息与电子工程系,浙江,杭州,310027 |
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| 基金项目： | 国家自然科学基金资助项目(60477018)，国家自然科学基金重点资助项目(60436020) |
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| 摘 要： | 初步分析了基于GaAs/AlGaAs量子阱材料的光致折射率变化规律,利用自洽方法计算了光生载流子浓度对传输光的折射率改变量。当805nm的控制光注入强度为6×103W/cm2(8×103W/cm2)时,在垂直材料表面内1μm深度处,对1.55μm(1.31μm)的传输光可以达到-1-0 2的折射率变化量级。与GaAs体材料相比,量子阱材料所需控制光强度能够减少约20%,有助于降低全光开关与全光调制器的功耗。
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| 关 键 词： | 集成光学 全光开关 光致折射率 量子阱材料 |
| 文章编号： | 1005-5630(2005)05-0136-05 |
| 收稿时间： | 2005/7/30 |
| 修稿时间： | 2005年7月30日 |
Analysis of photon-induced refractive index change based on GaAs/AlGaAs quantum wells materials |
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| LI Long-zhi,YANG Jian-yi,WANG Ming-hu,JIANG Xiao-qing.Analysis of photon-induced refractive index change based on GaAs/AlGaAs quantum wells materials[J].Optical Instruments,2005,27(5):136-140. |
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| Authors: | LI Long-zhi YANG Jian-yi WANG Ming-hu JIANG Xiao-qing |
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| Abstract: | The primary analysis of photon-induced refractive index change based on GaAs/AlGaAs quantum wells materials is presented in this paper.The effect of photon-excited carriers were treated self-consistently.For transmitting light at 1.55μm(1.3μm),Δn can reach-10~(-2) at 1μm depth along z axes when the power density of controlling light(805nm) is 6×10~3W/cm~2(8×10~3W/cm~2).Compared with the model based on GaAs bulk materials,the model based on quantum wells materials can reduce the controlling power density by about 20% to reach the same photon-induced refractive index change,and also decrease the controlling power consumption for all-optical switches and all-optical modulators. |
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| Keywords: | integrated optics all optical switches photon-induced refractive index quantum wells materials |
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