Wideband DHBTs using a graded carbon-doped InGaAs base |
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| Authors: | Dahlstrom M Fang X-M Lubyshev D Urteaga M Krishnan S Parthasarathy N Kim YM Wu Y Fastenau JM Liu WK Rodwell MJW |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA; |
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| Abstract: | We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f/sub /spl tau// and 400 GHz f/sub max/. The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8/spl middot/10/sup 19//cm/sup 3/ to 5/spl middot/10/sup 19//cm/sup 3/, an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 /spl Omega/) and contact (<10 /spl Omega/-/spl mu/m/sup 2/) resistivities are in part responsible for the high f/sub max/ observed. |
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