Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range |
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Authors: | A. A. Popov V. V. Sherstnev Yu. P. Yakovlev S. Tsivish Z. Zelinger |
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Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg;(2) J. Heyrovsky Institute of Physical Chemistry, 18223 Prague 8, Czech Republic |
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Abstract: | A decrease in the lasing threshold with increasing temperature has been observed in InAs/InAsSbP laser heterostructures for the 2.7–2.9 μm spectral range at cryogenic temperatures (T=32–85 K). At temperatures below 50 K a negative characteristic temperature, T 0=−70 K, was obtained for the threshold current. Characteristics of the temperature dependence of the threshold current and the laser output power were investigated. Pis#x2019;ma Zh. Tekh. Fiz. 23, 72–79 (November 26, 1997) |
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