Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy |
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| Authors: | Mauro Ciappa Alexander Koschik Maurizio Dapor Wolfgang Fichtner |
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| Affiliation: | 1. Integrated Systems Laboratory, Swiss Federal Institute of Technology (ETH), ETH-Zentrum, CH-8092 Zurich, Switzerland;2. Center for Materials and Microsystems, FBK-IRST, Trento, Italy;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;2. National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi’an), Xi’an 710100, China;1. European Centre for Theoretical Studies in Nuclear Physics and Related Areas (ECT*-FBK) and Trento Institute for Fundamental Physics and Applications (TIFPA-INFN), via Sommarive 18, I-38123 Trento, Italy;2. Department of Materials Science and Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK;3. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK;4. Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield, S3 7RH, UK;5. Department of Physics, University of Cambridge, Cavendish Laboratory, 19 JJ Thomson Avenue, Cambridge CB3 0HE, UK;6. Departament de Física Aplicada, Universitat d’Alacant, E-03080 Alacant, Spain;7. Departamento de Física – Centro de Investigación en Óptica y Nanofísica, Regional Campus of International Excellence “Campus Mare Nostrum”, Universidad de Murcia, E-30100 Murcia, Spain;8. Thermo Fisher Scientific, Vlastimila Pecha 1282/12, 627 00 Brno, Czech Republic;9. Laboratories for Electron Microscopy and Image Analysis, ISI AS CR, v.v.i Královopolská 147, 612 64 Brno, Czech Republic;1. Institute of Radiation Medicine, Helmholtz Zentrum München - German Research Center for Environmental Health (GmbH), Ingolstädter Landstr. 1, 85764 Neuherberg, Germany;2. Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal;3. Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Claude Bernard Lyon 1, CNRS/IN2P3 UMR 5822, Villeurbanne, France;4. Department of Engineering Physics, Tsinghua University, Beijing, China;5. Normandie University, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, UMR 6252, BP 5133, F-14070 Caen Cedex 05, France;6. Karlsruhe Institute of Technology, Karlsruhe, Germany;7. Institut de Radioprotection et de Sûreté Nucléaire, Fontenay-Aux-Roses, France;8. Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia;9. TranslaTUM, Klinikum rechts der Isar, Technische Universität München, Munich, Germany;10. Nuctech Company Limited, Beijing, China;11. Physikalisch-Technische Bundesanstalt, Braunschweig, Germany;12. Massachusetts General Hospital & Harvard Medical School, Department of Radiation Oncology, Boston, MA, USA;13. Peking University Cancer Hospital, Beijing, China;2. Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA;3. Intel Corporation, RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, OR 97124, USA |
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| Abstract: | Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects. |
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