PMOSFET anti-fuse using GIDL-induced-HEIP mechanism |
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| Authors: | JY Seo JE Seok WS Kim NH Cha JS Kang BS So |
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| Affiliation: | 1. DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd, 1, Samsungjeonja-ro, Banwol-Dong, Hwaseong-si, Gyeonggi-do 445-701, Republic of Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746, Republic of Korea |
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| Abstract: | We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition (Vg = high, Vd = low). In order to verify programming, double hump characteristics and thermal conduction analysis are introduced. |
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