Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy |
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| Authors: | Anna Cavallini Laura Polenta Antonio Castaldini |
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| Affiliation: | 1. Institute of Science and Technology for Opto-electronic Information, Yantai University, Shandong 264005, PR China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, PR China;1. Department of Industrial Engineering, University of Catania, Viale A. Doria, 6, 95125 Catania, Italy;2. Department of Chemistry, University “Sapienza” of Rome, P.le A. Moro 5, 00185 Rome, Italy;1. College of Medicine, Swansea University, Swansea, Wales SA2 8PP, UK;2. Department of Medical Physics and Clinical Engineering, Abertawe Bro Morgannwg University Health Board, Swansea, Wales SA2 8QA, UK;3. Diamond Detectors Ltd, Poole, Dorset BH17 7AF, UK;1. Advanced Materials Laboratory, Sumitomo Electric Industries Ltd., 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan;2. Coherent X-Ray Optics Laboratory, RIKEN Harima Institute, Sayo, Hyogo 679-5148, Japan;3. Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;1. Beijing Municipal Institute of Labor Protection, PR China;2. School of Chemical Engineering, Beijing Institute of Petrochemical Technology, PR China |
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| Abstract: | Electron beam induced current (EBIC) and optical beam induced current (OBIC) methods of scanning microscopy are here described in view of their applications in the analysis of recombination and generation of carriers in devices and materials. These analyses allow to evidence peculiarities in the charge carriers transport and/or failure in devices charge collection, measuring electrical parameters in the micrometer range, such as potential distribution within the sample, diffusion length and surface recombination velocity. This review will illustrate some case studies relevant to devices and material investigations in the two geometrical configurations: normal and planar. Literature results are reviewed in order to show capabilities and effectiveness of these methods in the investigation of the defect electrical activity and resulting localized minority carrier recombination and generation in devices under operating conditions, as well as in native semiconductor materials such as silicon, gallium arsenide and gallium nitride. |
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