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A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications
Authors:O. Latry  P. Dherbécourt  K. Mourgues  H. Maanane  J.P. Sipma  F. Cornu  P. Eudeline  M. Masmoudi
Affiliation:1. GPM UMR CNRS 6634, Université de Rouen, 76801 St-Etienne-du-Rouvray, France;2. THALES AIR SYSTEM, ZI du Mont Jarret, 76520 Ymare, France;3. IUT, Université de Rouen, Rue Lavoisier, 76821 Mont-Saint-Aignan, France;1. Department of Industrial Engineering, University of Catania, Viale A. Doria, 6, 95125 Catania, Italy;2. Department of Chemistry, University “Sapienza” of Rome, P.le A. Moro 5, 00185 Rome, Italy;1. Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications, Beijing 100876, China;2. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;1. iBET – Instituto de Biologia Experimental e Tecnológica, Apartado 12, 2780-901 Oeiras, Portugal;2. Instituto de Tecnologia Química e Biológica, Universidade Nova de Lisboa, Av. da República, 2780-157 Oeiras, Portugal;3. REQUIMTE, Departamento de Química, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa (UNL), 2829-516 Caparica, Portugal;1. Physical Technologies Center, Universitat Politecnica de Valencia, Camino de Vera s/n, 46022 Valencia, Spain;2. College of Civil Engineers, Calle Luis Vives 3, 46003 Valencia, Spain;3. Department of Construction Engineering and Civil Engineering Projects, Universitat Politecnica de Valencia, Camino de Vera s/n, 46022 Valencia, Spain;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;2. College of Physical Science and Technology, Sichuan Province Key Laboratory of Microelectronics, Sichuan University, Chengdu, 610064, China
Abstract:A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear with no incidence on RF figures of merit (Pout or PAE). Robustness and ruggedness are shown for LDMOS with this bench for radar applications in L-band.
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