Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs |
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| Authors: | G. Sasso M. Costagliola N. Rinaldi |
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| Affiliation: | 1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu, 210093, PR China;2. College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang, 277160, PR China;3. Institute of Opto-Electronics, Nanjing University, Yangzhou, 225009, PR China;1. Department of General Surgery, Shandong University Qilu Hospital, Jinan, China;2. Department of General Surgery, Yishui Central Hospital, Linyi, China;3. Department of Pharmacy, Shandong Provincial Hospital, Jinan, China;4. Department of Pathology, Linyi People’s Hospital, Linyi, China;5. Department of Surgery, Jinan Central Hospital, Jinan, China;6. Department of Pathology, Shandong University Medical School, Jinan, China;7. Department of Pathology, Shandong University Qilu Hospital, Jinan, China;1. Department of Electronic Science, Berhampur University, 760007, Odisha, India;2. Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761008, Odisha, India;1. Department of Industrial Engineering, University of Catania, Viale A. Doria, 6, 95125 Catania, Italy;2. Department of Chemistry, University “Sapienza” of Rome, P.le A. Moro 5, 00185 Rome, Italy |
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| Abstract: | The onset of impact ionization-induced instabilities limits the operative range of SiGe hetero-junction bipolar transistors. Based on referential Monte Carlo simulation results, a critical review of major models for the avalanche multiplication factor (M) is presented, and a new analytical model is proposed and successfully verified by measurements. The novel M formulation has been incorporated in a two-dimensional theoretical model describing bipolar transistor operation under pinch-in conditions/above the open-base breakdown voltage BVCEO. The physical mechanisms leading to electrical instability are addressed, and closed form analytical relations defining the onset of instability under forced-IE conditions are derived. The proposed model defines the limits of the Safe Operating Area (SOA) related to impact ionization, enabling the reliable usage of HBTs above BVCEO. |
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