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Magnetic anisotropy in (Ga,Mn)As on GaAs(1 1 3)As studied by magnetotransport and ferromagnetic resonance
Authors:W. Limmer   M. Glunk   J. Daeubler   T. Hummel   W. Schoch   C. Bihler   H. Huebl   M.S. Brandt   S.T.B. Goennenwein  R. Sauer
Affiliation:

aAbteilung Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany

bWalter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

cWalther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching, Germany

Abstract:The magnetic anisotropy of a 40-nm-thick (Ga,Mn)As film with 5% Mn grown on GaAs(1 1 3)A is studied by means of magnetotransport and ferromagnetic resonance (FMR) spectroscopy. In addition to the cubic and a weak uniaxial in-plane anisotropy, two uniaxial out-of-plane contributions along [1 1 3] and [0 0 1] are found. Using the anisotropy parameters determined from FMR, the longitudinal and transverse resistivities measured as a function of magnetic field orientation and strength are well modelled within the framework of a single ferromagnetic domain. In particular, the low-field data which are strongly affected by sudden jumps of the magnetization are well reproduced.
Keywords:GaMnAs   (1 1 3)A   Magnetic anisotropy   Magnetotransport   Ferromagnetic resonance
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