| GaAs中Si的二次离子质谱定量分析 |
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| 引用本文： | 邹庆生,查良镇,刘容,马农农,韩象明. GaAs中Si的二次离子质谱定量分析[J]. 真空科学与技术学报, 1996, 0(1) |
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| 作者姓名： | 邹庆生 查良镇 刘容 马农农 韩象明 |
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| 作者单位： | 清华大学电子工程系!北京100084(邹庆生，查良镇)，电子工业部第46研究所!天津300192(刘容，马农农，韩象明) |
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| 基金项目： | 国家自然科学基金，“八五”攻关项目!85-715-1-16 |
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| 摘 要： | 评述砷化镓中硅SIMS定量分析的进展，讨论了相对灵敏度因子法。对此种GaAs的原始参考物质，用实验确认了其可靠性。为常规定量分析研制了二次参考物质。对一些关键实验因素，如样品装载、仪器参数以及离子选择等进行了仔细研究，并评价它们对定量重复性、精确性、检测限和基体效应的影响。Cs 源入射时GaAs中Si定量分析精度在15％内；检测AsSi二次离子时，29Si的检测限达5×1014atoms／cm3。
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| 关 键 词： | 二次离子质谱 定量分析 相对灵敏度因子法 |
QUANTITATIVE SIMS ANALYSIS OF Si IN GaAs |
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| Zou Qingsheng,Cha Liangzhen. QUANTITATIVE SIMS ANALYSIS OF Si IN GaAs[J]. JOurnal of Vacuum Science and Technology, 1996, 0(1) |
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| Authors: | Zou Qingsheng Cha Liangzhen |
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| Abstract: | The development on quantitative analysis of Si in GaAs by SIMS is reviewed critically. Therelative sensitivity factor(RSF ) method is discussed in detail. The reliability of severaI original reference mate rials has been confirmed experirnentally. The secondary reference materials have been prepared for routinequantitative analysls. Son1e critical experimental factors, such as sample installation, instrument parametersand ion selection, have been sttldied intensively. Their effects on quantitative reproducibility,accuracy,detec tion limit and matrix effect are evL1luated. With Cs' bombardment,the quantitatlve reproducibillby of Si inGaAs is within 15%. The detection limit of 5 x1014atoms/cm3 has been achieved for 29 Si when AsSi- secondary ion is selected. |
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| Keywords: | Secondary ion mass spectrometry Quantitative analysis Relative sensitivity factor method |
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