首页 | 本学科首页   官方微博 | 高级检索  
     


Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part I: Theory
Authors:F. Shoucair  W. Hwang  P. Jain
Affiliation:Department of Electrical Engineering, Columbia University, New York, New York 10027, United States of America;Schlumberger Well Services, Mail Stop 30-910, 4001 Miranda Avenue, Palo Alto, CA 94304, United States of America.
Abstract:A systematic investigation of the effects of high temperature (27° C to 300° C) on long N and P channel MOS transistors suitable for Large Scale Integration (LSI) is presented. The theory of the MOSFET is used to study the temperature behavior of the device's electrical parameters. The main temperature dependent parameters are the threshold voltage, the channel mobility, and the junction leakage currents. Zero-Temperature-Coefficient (ZTC) gate bias voltages are predicted, in the nonsaturation (linear) region, and in the saturation region of operation, for a given device. Criteria for the existence of such bias points are developed, and nonidealities of these points discussed. The large and small signal parameters of the MOSFET biased at its ZTC points are obtained. Detailed comparisons with experimental results will be reported in an accompanying paper [1].
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号