Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part II: Experiment |
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| Authors: | F. Shoucair W. Hwang P. Jain |
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| Affiliation: | 1. Columbia Radiation Laboratory Columbia University, New York, New York 10027, United States of America;2. Department of Electrical Engineering, Columbia University, New York, New York 10027, United States of America |
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| Abstract: | An experimental investigation of the effects of high temperature (25°C to 300°C) on N and P channel MOS transistors is reported. At the device level, the temperature dependences of the electrical parameters are characterized individually; they include the threshold voltage, the channel mobility, and junction leakage currents. Drain current I–V characteristics are obtained for each of the subthreshold, nonsaturation, and saturation regions of operation, with temperature as a parameter. Zero-Temperature-Coefficient (ZTC) points' properties are found to be in good agreement with the theory. |
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