连续离子层吸附反应(SILAR)法制备纳米Cu_2O薄膜

采用低温液相薄膜制备工艺--连续离子层吸附反应(SILAR)法,在玻璃衬底上制备了纳米Cu2O薄膜,考察了工艺参数对薄膜质量和薄膜表面形貌的影响,对薄膜的生长速率与反应溶液浓度、反应温度以及循环次数的关系进行了研究和分析。结果表明,采用连续离子层吸附反应(SILAR)法有利于制备高质量的纳米Cu2O薄膜,连续离子层吸附反应(SILAR)法可以有效去掉疏松的离子,每次循环吸附反应都能使紧密吸附的离子转化成致密的纳米Cu2O薄膜,这样既有利于纳米Cu2O颗粒的生成,同时减少了污染和降低了成本。试验表明,制备纳米Cu2O薄膜的最佳反应温度为70℃,最佳反应溶液浓度均为1 mol/L,纳米Cu2O薄膜的膜厚随着循环次数的增加而增加,循环40次可制得厚度为0.38μm的薄膜。经XRD和SEM测试,所制备的薄膜纯度高,表面平整且致密,Cu2O颗粒大小约为100 nm。

PREPARATION OF Cu2O THIN FILMS USING SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION (SILAR)METHOD

Successive ionic layer adsorption and reaction（SILAR）,a liquid membrane preparation method,is used for the preparation of nanosized Cu2O thin films on ITO glass substrate.The effect of processing parameters on the quality of the thin film and the surface morphology is investigated.The growth rate of thin films is studied by varying the solution concentration,the reaction temperature and the reaction cycles.It is shown that the successive ionic layer adsorption and reaction（SILAR） method is capable of preparing high quality Cu2O thin films,it can effectively remove loosely adsorbed ions from the layers and is advantageous in the production of nanosized Cu2O crystals.Moreover,it reduces the pollution and the cost.With the reaction temperature at 70℃ and the concentration of the three solutions at 1mol/L,Cu2O thin films with thickness of 0.38μm is prepared through 40 reaction cycles.It is effective for producing high purity,smooth surface Cu2O thin films with about 100 nm crystals.