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VMOS reliability
Abstract:Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products manufactured in that technology. The results of a reliability study to examine the fundamental VMOS device stability, high-temperature operating life (HTOL) failure rates, and electrostatic protection are presented for the VMOS technology. Experimental data for more than five (5) million device-hours of HTOL predict a reliability failure rate of less than 0.01 percent/1000 h at 70°C for products fabricated in the VMOS technology. In addition, an electrostatic protection capability greater than 1800 V is possible with specially designed VMOS input protection devices.
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