| CMOS工艺下的温度检测电路的设计 |
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| 引用本文： | 陈良生,洪志良,闵昊,李联. CMOS工艺下的温度检测电路的设计[J]. 固体电子学研究与进展, 2005, 25(2): 231-234 |
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| 作者姓名： | 陈良生 洪志良 闵昊 李联 |
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| 作者单位： | 复旦大学信息科学与工程学院微电子系,上海,200433 |
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| 摘 要： | 介绍一种在CMOS工艺条件下,温度检测电路的实现方案,对温度检测的原理进行了深入分析,通过具体的电路设计验证了实现方案的可行性。电路在HHNECCZ6H工艺上流片。测试结果表明电路性能稳定可靠,提出的方案切实可行。电路可在-50°C到100°C范围内测温,精度可达正负3°C。
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| 关 键 词： | 互补金属氧化物半导体 温度检测 集成电路设计 |
| 文章编号： | 1000-3819(2005)02-231-04 |
| 修稿时间： | 2004-03-19 |
Design of CMOS Temperature Detection Circuit |
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| Chen Liangsheng,HONG Zhiliang,MIN Hao,LI Lian. Design of CMOS Temperature Detection Circuit[J]. Research & Progress of Solid State Electronics, 2005, 25(2): 231-234 |
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| Authors: | Chen Liangsheng HONG Zhiliang MIN Hao LI Lian |
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| Abstract: | Scheme of temperature detection using standard CMOS technology is presented in this paper. Detailed analysis of the principle of temperature detection is presented too. To evaluate the feasibility of the presented methodology, a real temperature detection circuit is designed and tapped out using HHNEC CZ6H process. Test results of the circuit indicate the scheme is feasible. The circuit can work properly from -50~°C to 100~°C with a resolution of ±3~°C . |
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| Keywords: | CMOS temperature detection IC design |
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