Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric |
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| Authors: | Chiang K.C. Lai C.H. Chin A. Wang T.J. Chiu H.F. Jiann-Ruey Chen McAlister S.P. Chi C.C. |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan; |
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| Abstract: | A very high density of 23 fF//spl mu/m/sup 2/ has been measured in RF metal-insulator-metal (MIM) capacitors which use high-/spl kappa/ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits. |
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