Improved separation efficiency of photogenerated carriers for Fe2O3/SrTiO3 heterojunction semiconductor |
| |
Authors: | Zhenlong Zhang Guangsheng Liu Yanli Mao |
| |
Affiliation: | 1. Key Lab of Photovoltaic Materials of Henan Province, Kaifeng 475004, China;2. School of Physics and Electronics, Henan University, Kaifeng 475004, China |
| |
Abstract: | To investigate the mechanisms of the improvement on separation efficiency of photogenerated carriers, a Fe2O3/SrTiO3 heterojunction semiconductor with an improved separation efficiency was successfully prepared. The heterojunction semiconductor was characterized with X-ray diffraction (XRD), UV–vis absorption spectrum, scanning electron microscope (SEM) and surface photovoltage (SPV) spectroscopy. The energy band diagrams of Fe2O3 and SrTiO3 were determined with X-ray photoelectron spectroscopy (XPS), based on which the conduction band offset (CBO) between Fe2O3 and SrTiO3 was quantified to be 1.26 ± 0.03 eV. The recombination of photogenerated carriers was investigated with photoluminescence (PL) spectrum, which indicates that the formation of Fe2O3/SrTiO3 decreases the recombination. Thus the improved separation efficiency is mainly due to the energy difference between the conduction band edges of Fe2O3 and SrTiO3, and the decreased electron-hole recombination for Fe2O3/SrTiO3. |
| |
Keywords: | Separation efficiency Fe2O3/SrTiO3 Heterojunction semiconductor |
本文献已被 ScienceDirect 等数据库收录! |
|