Metal Silicides: Active elements of ULSI contacts |
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Authors: | C M Osburn J Y Tsai J Sun |
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Affiliation: | (1) Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911 Raleigh, NC;(2) Research and Development, LSI Logic, Inc., 95054 Santa Clara, CA |
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Abstract: | As device dimensions scale to the 0.1 urn regime, the self-aligned suicide (SALICIDE) contact technology increasingly becomes
an integral part of both the ultra-shallow junction and the metal oxide semiconductor field-effect transistor device itself.
This paper will discuss the effect of suicide materials and formation processes on suicide stability, junction consumption,
the ability to accurately profile shallow junctions, and contact resistance in series with the channel. The use of suicides
as diffusion sources (SADS) provides an important pathway toward optimization of suicide technology. Diffusion of boron and
arsenic from nearly epitaxial layers of CoSi2, formed from bilayers of Ti and Co, offer good suicide stability, ultra-shallow, low-leakage junctions, and low contact resistance. |
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Keywords: | Contact resistance Metal oxide semiconductor field-effect transistor (MOFSET) device Metal suicides |
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