| 1.8 GHz CMOS有源负载低噪声放大器 |
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| 引用本文： | 王良江, 冯全源,. 1.8 GHz CMOS有源负载低噪声放大器[J]. 电子器件, 2005, 28(3): 494-496 |
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| 作者姓名： | 王良江 冯全源 |
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| 作者单位： | 西南交通大学微电子研究所,成都,610031;西南交通大学微电子研究所,成都,610031 |
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| 摘 要： | 提出了一种新的变压器型有源电感负载低噪声放大器设计方案。单片无源大电感的品质因数通常很低，因此，需验证变压器型有源电感替代无源电感负载的有效性，与现有的一些单片无源电感负载低噪声放大器进行了比较，结果表明变压器型有源电感负载低噪声放大器可以得到更低的噪声系数。
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| 关 键 词： | 互补金属氧化物半导体 低噪声放大器 有源电感 噪声系数 |
| 文章编号： | 1005-9490（2005）03-0494-03 |
| 收稿时间： | 2005-01-11 |
| 修稿时间： | 2005-01-11 |
A CMOS Low Noise Amplifier at 1.8 GHz with Active Inductor Load |
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| WANG Liang-jiang,FENG Quan-yuan. A CMOS Low Noise Amplifier at 1.8 GHz with Active Inductor Load[J]. Journal of Electron Devices, 2005, 28(3): 494-496 |
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| Authors: | WANG Liang-jiang FENG Quan-yuan |
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| Affiliation: | Institute of Micro-electronics; Southwest Jiaotong University; Chendu 610031; China |
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| Abstract: | A 1.8GHz CMOS low noise amplifier (LNA) with transformer-type active inductor load is presented. For large inductance value, the quality-factor (Q) of an on-chip passive inductor is commonly low. Hence, the purpose of this work is to verify the validity of using transformer-type active inductor load as substitutes for passive one. The performance of the LNA is simulated and compared with certain existing LNA with passive on-chip inductor load which shows the LNA with transformer-type active inductor load can achieve lower noise figure. |
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| Keywords: | complementary metal oxide semiconductor low noise amplifier active inductor noise figure |
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