| 无镉的铜铟镓硒太阳电池关键膜层XPS及AFM分析 |
| |
| 引用本文： | 廖荣,张海燕,王道然,杨铁铮,范宇.无镉的铜铟镓硒太阳电池关键膜层XPS及AFM分析[J].电子显微学报,2014(3):215-221. |
| |
| 作者姓名： | 廖荣 张海燕 王道然 杨铁铮 范宇 |
| |
| 作者单位： | [1]广东工业大学材料与能源学院广东广州510006;华南理工大学电子与信息学院,广东广州510640 [2]广东工业大学材料与能源学院,广东广州510006 |
| |
| 基金项目： | 2013年华南理工大学教研教改项目（No.x2dx-Y1130010）;国家级大学生创新创业训练计划项目（No.201210561042）. |
| |
| 摘 要： | 应用溅射后硒化法和原子层沉积法分别制备了无镉的铜铟镓硒电池关键膜层CIGS光吸收薄膜和ZnO缓冲层,着重对该两膜层进行XPS和AFM表面分析,得到比较理想的制备工艺条件,并结合其它检测方法:SEM、XRD及吸收光谱等,证明采用操作简便、成本低廉的该工艺能制备出无镉的铜铟镓硒电池。通过I-V测试结果,该电池有一定的光电转换效率。
|
| 关 键 词： | 原子层沉积 氧化锌 XPS AFM 无镉的铜铟镓硒太阳能电池 |
XPS and AFM analysis of key layer of Cd-free CIGS solar cell |
| |
| LIAO RongSchool of Material and Energy,Guangdong University of Technology,Guangzhou Guangdong,;School of Electronic and Information Engineering,South China University of Technology,Guangzhou Guangdong,China ZHANG Hai-yanSchool of Material and Energy,Guangdong University of Technology,Guangzhou Guangdong,WANG Dao-ranSchool of Electronic and Information Engineering,South China University of Technology,Guangzhou Guangdong,China YANG Tie-zhengSchool of Electronic and Information Engineering,South China University of Technology,Guangzhou Guangdong,China FAN Yu.XPS and AFM analysis of key layer of Cd-free CIGS solar cell[J].Journal of Chinese Electron Microscopy Society,2014(3):215-221. |
| |
| Authors: | LIAO RongSchool of Material and Energy Guangdong University of Technology Guangzhou Guangdong ;School of Electronic and Information Engineering South China University of Technology Guangzhou Guangdong China ZHANG Hai-yanSchool of Material and Energy Guangdong University of Technology Guangzhou Guangdong WANG Dao-ranSchool of Electronic and Information Engineering South China University of Technology Guangzhou Guangdong China YANG Tie-zhengSchool of Electronic and Information Engineering South China University of Technology Guangzhou Guangdong China FAN Yu |
| |
| Affiliation: | LIAO Rong(School of Material and Energy, Guangdong University of Technology, Guangzhou Guangdong 510006 ;School of Electronic and Information Engineering, South China University of Technology, Guangzhou Guangdong 510641 , China) ZHANG Hai-yan(School of Material and Energy, Guangdong University of Technology, Guangzhou Guangdong 510006) WANG Dao-ran(School of Electronic and Information Engineering, South China University of Technology, Guangzhou Guangdong 510641 , China) YANG Tie-zheng(School of Electronic and Information Engineering, South China University of Technology, Guangzhou Guangdong 510641 , China) FAN Yu(School of Electronic and Information Engineering, South China University of Technology, Guangzhou Guangdong 510641 , China) |
| |
| Abstract: | CuIn1-x Gax Se2 light absorbing film and ZnO buffer layer for Cd-free CIGS solar cell were prepared by evaporating selenylation method after sputtering and atomic layer deposition.The two films were analyzed by X-ray photoelectron spectroscopy,atomic force microscope,scanning electron microscope,X-ray diffraction,and absorption spectrum.The optimized preparation conditions were obtained.A photoelectric conversion efficiency of 3.84% was obtained in the Cd-free CIGS solar cell from the low-cost and simple preparation method. |
| |
| Keywords: | atomic layer deposition zinc oxide XPS AFM Cd-free CIGS solar cell |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
