| 一种高电流增益的SiGe HBT的研制 |
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| 引用本文： | 赵安邦. 一种高电流增益的SiGe HBT的研制[J]. 中国集成电路, 2008, 17(6): 55-60 |
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| 作者姓名： | 赵安邦 |
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| 作者单位： | 江苏淮安信息职业技术学院,江苏,淮安,223003 |
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| 摘 要： | 研制了一种平面集成多晶发射极SiGe HBT。经测量，在室温下电流增益β大于1500，最大达到2800，其Vceo为5V，厄利（Early）电压VA大于10V，βVh乘积达到15000以上。这种器件对多晶硅发射极砷杂质浓度分布十分敏感。
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| 关 键 词： | SiGe 异质结双极晶体管 平面集成 多晶硅发射极 |
A SiGe HBT with High Current Gain |
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| ZHAO An-bang. A SiGe HBT with High Current Gain[J]. China Integrated Circuit, 2008, 17(6): 55-60 |
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| Authors: | ZHAO An-bang |
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| Affiliation: | ZHAO An-bang (Huaian College of Information Technology, jiangsu 223003, P. R. China) |
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| Abstract: | A planar integration SiGe HBT with polysilicon emitter is fabricated, which has a current gain greater than 1500at room temperature and even up to 2800 at its maximum. Its Vcso is 5 V and Early voltage is greater than 10 V, |
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| Keywords: | SiGe HBT Planar integration Polysilicon emitter |
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