| F＋离子注入诱导应变层InGaAsP／InGaAs多量子阱结构无序的光荧光 |
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| 引用本文： | 赵杰,王永晨.F＋离子注入诱导应变层InGaAsP／InGaAs多量子阱结构无序的光荧光[J].半导体光电,1993,14(3):263-268. |
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| 作者姓名： | 赵杰 王永晨 |
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| 作者单位： | 天津师范大学物理系，天津师范大学实验中心，天津师范大学物理系 副教授 天津300074，天津300074 |
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| 摘 要： | 本文研究了F~+离子注入诱导InGaAsP/InGaAs多量子阱结构,并着重研究了晶格匹配和失配应力对F~+离子注入诱导无序的影响,用变温光荧光(13～300K)方法研究了和带隙直接有关的光荧光峰值随温度变化的规律。在13K条件下,F~-离子注入具有压应力应变层的样品导致光荧光峰产生35meV的蓝移,而对具有张应力的样品,仅产生8meV的蓝移。定性地分析了产生不同程度蓝移的原因。
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| 关 键 词： | 离子注入 量子阱结构 化合物半导体 |
Photoluminescence Study on F~+ Implantation Induced Disordering in InGaAs/InGaAsP Strained Multiple Quantum Wells Structures |
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| Zhao Jie,Wang Yuongchen,Li Dejun.Photoluminescence Study on F~+ Implantation Induced Disordering in InGaAs/InGaAsP Strained Multiple Quantum Wells Structures[J].Semiconductor Optoelectronics,1993,14(3):263-268. |
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| Authors: | Zhao Jie Wang Yuongchen Li Dejun |
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| Affiliation: | Zhao Jie,Wang Yuongchen,Li Dejun Department of Physics,Tianjin Normal University,Tianjin 300074 |
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| Abstract: | The effect of strain on F~+-implantation induced compositional disor- dering in InGaAs/InGaAsP strained layer multiple quantum wells (MQW)structure is investigated.The temperature dependence of photoluminescence peak energy was measured and compared for structures with tensile,compressive strained and un- strained MQWs.At 14K,the biggest blue-shift(35meV)was obtained from the com- pressive strained structure and the smallest one(8meV)from the tensile strained structure.The effect of the strain with different forms on implantat ion induced compositional disordering is qualitatively explained. |
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| Keywords: | Implantation Induced Disordering Compressive and lensne Strained Layer MQW Structure |
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