| GexSi1—x／Si异质结长波长红外探测器 |
| |
| 引用本文： | 熊光骏.GexSi1—x／Si异质结长波长红外探测器[J].半导体光电,1993,14(1):7-12,24. |
| |
| 作者姓名： | 熊光骏 |
| |
| 作者单位： | 重庆光电技术研究所 工程师，永川 632163 |
| |
| 摘 要： | 描述了 Ge_xSi_(1-x)/Si 异质结长波长红外探测器的基本工作原理及结构,并结合器件介绍了实现异质结生长的各种工艺,如 MBE,CVD 等。
|
| 关 键 词： | 红外探测器 异质结 化学汽相淀积 |
Ge_xSi_(1-x)/Si Heterojuncton Long-Wavelength Infrared Detectors |
| |
| Xiong Guangjun.Ge_xSi_(1-x)/Si Heterojuncton Long-Wavelength Infrared Detectors[J].Semiconductor Optoelectronics,1993,14(1):7-12,24. |
| |
| Authors: | Xiong Guangjun |
| |
| Abstract: | The principle of operation and structure of Ge_xSi_(1-x)/Si hetero- junction long-wavelength infrared detectors are described in this paper.Te- chnologies for device fabrication and heterojunction growth are presented such as MBE and CVD,etc. |
| |
| Keywords: | Infrared Detectors Heterojunctio CVD |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
