非离子表面活性剂在阻挡层CMP后清洗中去除颗粒作用的研究

本文对非离子表面活性剂在阻挡层CMP后清洗中对颗粒的去除作用进行了研究。实验过程中,通过改变活性剂的浓度,在12inch多层铜布线片上进行了一系列的实验来确定最佳的清洗效果。然后对活性剂在缺陷控制、颗粒去除,以及活性剂在清洗过程中所起的负面作用等方面进行了讨论。实验结果表明,非离子表面活性剂在阻挡层CMP后清洗中根据浓度的不同所起的正面、负面作用不同,从而为阻挡层CMP后清洗过程中非离子表面活性剂的加入起到一定的指导作用。

Non-ionic surfactant on particles removal in post-CMP cleaning

The effect of a non-ionic surfactant on particles removal in post-CMP cleaning was investigated. By changing the concentration of the non-ionic surfactant, a series of experiments were performed on the 12 inch Cu pattern wafers in order to determine the best cleaning results. Then the effect of the surfactant on the reduction of defects and the removal of particles was discussed in this paper. What is more, the negative effect of a non-ionic surfactant was also discussed. Based on the experiment results, it is concluded that the non-ionic surfactant could cause good and ill effects at different concentrations in the post-CMP cleaning process. This understanding will serve as a guide to how much surfactant should be added in order to achieve excellent cleaning performance.