一种考虑MOS效应及频变特性的类传输线型锥形TSV通孔电学模型

为准确描述锥形TSV通孔寄生电阻、电容、电感高频下MOS效应及其频变特性,本文首先推导出了锥形TSV通孔压控MOS电容的解析模型。其次基于修正后的双传输线寄生参数提取公式对锥形TSV通孔内寄生参数进行了提取。最终建立了一种考虑MOS效应及频变特性的类传输线型锥形TSV通孔电学模型。通过仿真工具验证模型精度,结果显示：在100GHz频带内模型与仿真结果吻合度较高,可以准确描述高频下锥形TSV通孔内寄生参数的半导体物理特性及频变特性,可用来预测锥形TSV通孔的电学特性,对优化三维集成电路电学性能有一定指导意义。

A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior

The analytical model of voltage-controlled MOS capacitance of tapered through silicon via (TSV) is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency-dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.