| 接触面陷阱密度对a-InSnZnO薄膜晶体管器件电气性能的影响研究 |
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| 引用本文： | 梁永烨,Kyungsoo Jang,S. Velumani,Cam Phu Thi Nguyen,Junsin Yi.接触面陷阱密度对a-InSnZnO薄膜晶体管器件电气性能的影响研究[J].半导体学报,2015,36(2):024007-5. |
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| 作者姓名： | 梁永烨 Kyungsoo Jang S. Velumani Cam Phu Thi Nguyen Junsin Yi |
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| 作者单位： | National Key Laboratory for Electronic Measurement Technology, North University of China;College of Information and Communication Engineering, Sungkyunkwan University;Department of Electrical Engineering (SEES), CINVESTAV-IPN, Avenida IPN 6508,San Pedro Zacatenco, Mexico D.F. |
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| 摘 要： | We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest Nt of 5.68×1011 cm-2 and low resistivity of 1.21×10-3Ω·cm exhibited a turn-on voltage(VON) of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio(ION/IOFF) of8 x 108.With increasing Nt,the VON,S.S and ION/IOFF were suppressed to-9.40 V,0.24 V/dec and 2.59×108,respectively.The VTH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.
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| 关 键 词： | a-ITZO TFTs low resistivity interface trap density electrical properties electrical stability |
Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor |
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| Liang Yongye,Kyungsoo Jang,S. Velumani,Cam Phu Thi Nguyen and Junsin Yi.Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor[J].Chinese Journal of Semiconductors,2015,36(2):024007-5. |
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| Authors: | Liang Yongye Kyungsoo Jang S Velumani Cam Phu Thi Nguyen and Junsin Yi |
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| Affiliation: | 1. National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China;College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon,Gyeonggi-do 440-746, Republic of Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon,Gyeonggi-do 440-746, Republic of Korea;3. Department of Electrical Engineering(SEES), CINVESTAV-IPN, Avenida IPN 6508, San Pedro Zacatenco, Mexico D.F. |
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| Abstract: | |
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| Keywords: | a-ITZO TFTs low resistivity interface trap density electrical properties electrical stability |
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