| 初始层生长条件和Mg活性剂对MOVPE方法生长GaN薄膜质量的影响 |
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| 引用本文： | 曹峻松,吕欣,赵璐冰,曲爽,高伟. 初始层生长条件和Mg活性剂对MOVPE方法生长GaN薄膜质量的影响[J]. 半导体学报, 2015, 36(2): 023005-4. DOI: 10.1088/1674-4926/36/2/023005 |
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| 作者姓名： | 曹峻松 吕欣 赵璐冰 曲爽 高伟 |
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| 作者单位： | State Key Laboratory of Solid-State Lighting, Beijing Solid-State Lighting Science and Technology Promotion Center;Institute of Semiconductors, Chinese Academy of Sciences;Shandong Inspur Huaguang Optoelectronics Co.,LTD. |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China(No.2012AA03A115) |
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| 摘 要： | The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high Ⅴ/Ⅲ ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.
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| 关 键 词： | metalorganic vapor phase epitaxy gallium nitride high resolution X-ray diffraction |
| 收稿时间： | 2014-07-14 |
| 修稿时间： | 2014-08-17 |
Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE |
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| Cao Junsong,L,#; Xin,Zhao Lubing,Qu Shuang and Gao Wei. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. Chinese Journal of Semiconductors, 2015, 36(2): 023005-4. DOI: 10.1088/1674-4926/36/2/023005 |
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| Authors: | Cao Junsong,L&# Xin,Zhao Lubing,Qu Shuang Gao Wei |
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| Affiliation: | 1. State Key Laboratory of Solid-State Lighting, Beijing Solid-State Lighting Science and Technology Promotion Center,Beijing 100083, China;2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3. Shandong Inspur Huaguang Optoelectronics Co., LTD., Weifang 261000, China |
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| Abstract: | The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode. |
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| Keywords: | Metalorganic vapor phase epitaxy. Gallium nitride. High resolution X-ray diffraction |
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