带有锥状反射结构的AlGaInP键合衬底LED

本研究通过光辅助化学腐蚀技术在衬底键合AlGaInP反极性发光二极管中制备出锥状反射镜结构提升器件的光提取效率。首先利用氢氟酸与双氧水在532nm激光的辐射下载GaP:Mg层制备出锥状腐蚀结构，然后将金属反射镜蒸镀在锥状结构之上制备锥状的反射镜结构。在完成全部芯片工艺后，测试结果表明锥状反射镜结构可以显著提升光提取效率，并在光通量测量中与表面粗化集成平板反射镜LED相比较，得到了18.55%的增强。

Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector

We demonstrate and introduce here a pyramidally patterned metal reflector into wafer-bonding AlGaInP light emitting diodes (LEDs) to improve the light extraction efficiency by using a photo-assisted chemical etched GaP:Mg layer. The pyramid patterns were fabricated employing a HF and H₂O₂ mixed solution in combination with a 532 nm laser on a GaP:Mg surface firstly, and then a gold reflector layer was evaporated onto the patterned GaP:Mg surface. After the whole chip process, the patterned gold reflector structure was confirmed to be efficient for light extraction and a 18.55% enhancement of the electroluminescent flux has been obtained by an integrating sphere, compared to the surface textured LEDs with flat reflectors.