| Compact Analytical Model of Double Gate Junction-less Field Effect Transistor Comprising Quantum-Mechanical Effect |
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| 作者姓名： | Shoubhik Gupt Bahniman Ghosh Shiromani Balmukund Rahi |
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| 作者单位： | Department of Electrical Engineering, Indian Institute of Technology Kanpur |
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| 摘 要： | We investigate the quantum-mechanical effects on the electrical properties of the double-gate junctionless field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.
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| 关 键 词： | quantum-mechanical effect junction-less transistor threshold voltage oxide thickness |
Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect |
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| Shoubhik Gupt,Bahniman Ghosh,Shiromani Balmukund Rahi.Compact Analytical Model of Double Gate Junction-less Field Effect Transistor Comprising Quantum-Mechanical Effect[J].Chinese Journal of Semiconductors,2015,36(2):024001-6. |
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| Authors: | Shoubhik Gupt Bahniman Ghosh and Shiromani Balmukund Rahi |
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| Affiliation: | Department of Electrical Engineering, Indian Institute of Technology Kanpur, India |
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| Abstract: | We investigate the quantum-mechanical effects on the electrical properties of the double-gate junction-less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation. |
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| Keywords: | Quantum-mechanical effect junction-less transistor |
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