Sidewall effects in shallow emitter of small bipolar transistor |
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| Authors: | Eltoukhy A.A. Roulston D.J. |
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| Affiliation: | University of Waterloo, Department of Electrical Engineering, Waterloo, Canada; |
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| Abstract: | The current injected into a shallow emitter is studied using a two-dimensional numerical solution of the transport equations, including the effects of bandgap reduction, lifetime and surface recombination velocity. The present results show clearly the correlation between the injected current and the bowl-shaped emitter area as well as the width of metal contact. |
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