Electrical characterizations of Neutron-irradiated SiC Schottky diodes |
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Authors: | Geunwoo Ko Hong-Yeol Kim Joona Bang Jihyun Kim |
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Affiliation: | (1) Department of Chemical and Biological Engineering, Korea University, Seoul, 136-713, Korea |
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Abstract: | Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2. This article is dedicated to Professor Chul Soo Lee in commemoration of his retirement from Department of Chemical and Biological Engineering of Korea University. |
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Keywords: | Neutron Irradiation Silicon Carbide Diode |
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