Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×10¹¹ neutron/cm², the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×10¹¹ neutron/cm². In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×10¹¹ neutron/cm². This article is dedicated to Professor Chul Soo Lee in commemoration of his retirement from Department of Chemical and Biological Engineering of Korea University.