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Modeling of magnesium diffusion in gallium arsenide. 2. Redistribution of ion-implanted impurity |
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| Authors: | V. A. Labunov O. I. Velichko S. K. Fedoruk |
| Abstract: | The redistribution of ion-implanted magnesium under high-rate annealing conditions is calculated. Consideration of the nonuniformity of the interstitial gallium atom distribution makes it possible to explain  ascending diffusion in the region of strong distortions of a crystalline lattice.Belarusian State University of Information Science and Radioelectronics, Minsk, Belarus. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 68, No. 1, pp. 39–43, January–February 1995. |
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