Parallel-to-serial transformation by using large-cell-size amorphous-silicon charge-coupled devices |
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Authors: | Uchida Y Kishida S Matsumura M |
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Affiliation: | Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan; |
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Abstract: | An 8 bit/mm amorphous-silicon charge-coupled device of resistive gate structure and amorphous-silicon transistors has been integrated in monolithic form. The device operated at 10 kHz with a transfer efficiency of more than 99.4% per transfer. Parallel signals applied from external terminals have been transferred to cells in the charge-coupled device under the control of transistors, and have been detected as serial signals at the output terminal of the charge-coupled device. |
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