| 非磁性半导体磁阻效应物理模型研究 |
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| 引用本文： | 何雄,孙志刚. 非磁性半导体磁阻效应物理模型研究[J]. 材料导报, 2017, 31(17): 6-11. DOI: 10.11896/j.issn.1005-023X.2017.017.002 |
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| 作者姓名： | 何雄 孙志刚 |
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| 作者单位： | 武汉理工大学材料复合新技术国家重点实验室,武汉,430070 |
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| 基金项目： | 国家自然科学基金(11574243；11174231) |
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| 摘 要： | 非磁性半导体的磁阻效应一直以来受到了科研工作者的广泛关注,具有重大的研究意义和价值,在磁性传感器、高密度存储等方面有着潜在应用前景。主要综述了几种典型的非磁性半导体磁阻效应物理模型,即空间电荷效应模型、纳米非均匀性模型、二极管辅助几何增强模型、载流子复合模型和雪崩电离模型。最后,对非磁性半导体的雪崩电离基磁阻效应进行了分析和展望。
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| 关 键 词： | 非磁性半导体 磁阻效应 物理模型 雪崩电离 巨磁阻 |
Physical Models of Magnetoresistance Effects in Non-magnetic Semiconductors |
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| HE Xiong and SUN Zhigang. Physical Models of Magnetoresistance Effects in Non-magnetic Semiconductors[J]. Materials Review, 2017, 31(17): 6-11. DOI: 10.11896/j.issn.1005-023X.2017.017.002 |
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| Authors: | HE Xiong and SUN Zhigang |
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| Affiliation: | State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 and State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 |
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| Abstract: | Magnetoresistance (MR) effects in non-magnetic semiconductors attract lots of attentions because of its great research significance and potential applications in magnetic sensors, high density storage and so forth. In this paper, several typical physical models such as space-charge effect model, nano-inhomogeneous model, diode-assisted geometry enhanced model, carriers recombination model, and avalanche breakdown model are summarized. Finally, the MR effects based on avalanche breakdown of non-magnetic semiconductors are analyzed and forecasted. |
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| Keywords: | non-magnetic semiconductors magnetoresistance effects physical models avalanche breakdown giant magnetoresistance |
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