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化学气相沉积法制备氮化硼纳米管的研究进展:反应装置、气源材料、催化剂
引用本文:龙晓阳,俄松峰,李朝威,李涛涛,吴隽,姚亚刚.化学气相沉积法制备氮化硼纳米管的研究进展:反应装置、气源材料、催化剂[J].材料导报,2017,31(19):19-27.
作者姓名:龙晓阳  俄松峰  李朝威  李涛涛  吴隽  姚亚刚
作者单位:1. 武汉科技大学耐火材料与冶金国家重点实验室,武汉430081;中国科学院苏州纳米技术与纳米仿生研究所,苏州215000;2. 中国科学院苏州纳米技术与纳米仿生研究所,苏州,215000;3. 武汉科技大学耐火材料与冶金国家重点实验室,武汉,430081
基金项目:国家自然科学基金(51522211);中国科学院苏州纳米技术与仿生研究所纳米器件与应用重点实验室项目(15QT02)
摘    要:氮化硼纳米管(BNNTs)具有优良的耐高温、抗氧化、防辐射、绝缘和导热性能,因此,在航空航天、辐射屏蔽、热界面材料以及深紫外发射等领域具有潜在的应用前景。然而,高品质BNNTs的可控制备和批量生产仍然是学术和工业界的重大挑战。在BNNTs的众多制备方法中,化学气相沉积法(CVD)是最有潜力实现其可控制备的方法之一。但是,科学家们对于CVD法制备BNNTs的催化机理和影响因素尚未形成共识。鉴于此,文章从反应装置、氮源、硼源和催化剂4个方面对CVD法制备BNNTs进行了综述,并系统总结了相应的规律。在此基础上,分析了目前BNNTs可控制备中存在的问题,并对CVD法在BNNTs可控制备中的作用进行了展望,以期对今后BNNTs的制备起到借鉴作用。

关 键 词:氮化硼纳米管  化学气相沉积  硼源  催化剂

A Review of Chemical Vapor Deposition for Synthesis of Boron Nitride Nanotubes:Reaction Devices, Vapor Sources and Catalysts
LONG Xiaoyang,E Songfeng,LI Chaowei,LI Taotao,WU Jun and YAO Yagang.A Review of Chemical Vapor Deposition for Synthesis of Boron Nitride Nanotubes:Reaction Devices, Vapor Sources and Catalysts[J].Materials Review,2017,31(19):19-27.
Authors:LONG Xiaoyang  E Songfeng  LI Chaowei  LI Taotao  WU Jun and YAO Yagang
Affiliation:The State Key Laboratory of Refractories and Metallurgy, Faculty of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000,Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000,Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000,Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000,The State Key Laboratory of Refractories and Metallurgy, Faculty of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 and Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000
Abstract:Boron nitride nanotubes (BNNTs) have great application potential in aerospace radiation shielding materials,thermal interface materials,deep ultraviolet emission materials and many other fields due to their excellent performances-oxidation resistance,radiation shield,heat conduction and so forth.However,BNNTs' controllable and large scale preparation still faces an enormous challenge.Among the different kinds of BNNTs' preparation methods,chemical vapor deposition (CVD) is one of the most promising methods for its controllable preparation.Nevertheless,scientists have not reached a consensus on the growth mechanism and influencing factors of BNNTs' synthesis by CVD.Hence,this article provides a review on preparation of BNNTs by CVD,and a discussion about the effects of reaction devices,nitrogen sources,boron sources and catalysts.Besides,the unsettled issues and a prospect for the controllable synthesis of BNNT by CVD are also proposed.
Keywords:boron nitride nanotube  chemical vapor deposition  boron source  catalyst
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