| SiC电热元件的高温失效分析 |
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| 引用本文： | 常春,于家洪,李木森,田雷言. SiC电热元件的高温失效分析[J]. 金属热处理, 1999, 0(8): 35-37 |
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| 作者姓名： | 常春 于家洪 李木森 田雷言 |
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| 作者单位： | 山东工业大学材料科学与工程学院,济南,250061 |
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| 基金项目： | “山东省技术开发重点项目”资金 |
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| 摘 要： | 对炉用ＳｉＣ电热元件在空气介质中于１０００℃－１５８０℃范围的高温失效行为进行了试验分析。元件表面在高温下形成熔融态ＳｉＯ２薄层。由于在氧化反应中生成气体而产生气泡，气泡破裂后材料表面失去保护层，导致了高温氧化的加剧。文中对ＳｉＣ电热元件在不同温度下的脱落物进行了分析，对ＳｉＣ电热元件高温失效的原因进行了综合讨论。
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| 关 键 词： | 碳化硅 电热元件 氧化物 气泡 |
Failure Analysis of SiC Electrical Heating Element at High Temperature |
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| Chang Chun,Yu Jiahong,Li Musen,Tian Leiyan. Failure Analysis of SiC Electrical Heating Element at High Temperature[J]. Heat Treatment of Metals, 1999, 0(8): 35-37 |
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| Authors: | Chang Chun Yu Jiahong Li Musen Tian Leiyan |
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| Abstract: | The surface of SiC electrical heating elements(EHE) which were set up electric circuit to heat to 10001580 in the air was analyzed in this paper.Melting SiO2 layer was produced on the surface of EHE,and it was risen in bubbles by the gases produced during oxidizing reactions.The melting SiO2 layer lost protective role as its bubbles broken.The products oxidized at various temperatures were analyzed and the temperatureweight change curve was drawn.Finally,the failure mechanism of SiC EHE was studied. |
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| Keywords: | SiC electrical heating element oxide bubble. |
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