Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs |
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Authors: | Hideaki Tsuchiya Motoki Horino Tanroku Miyoshi |
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Affiliation: | 1. Department of Electrical and Electronics Engineering, Kobe University, 1-1, Rokko-dai, Nada-ku, Kobe, 657-8501, Japan
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Abstract: | Quantum transport properties of nano-scaled SOI-MOSFETs are investigated based on a quantum Monte Carlo (MC) device simulation. The quantum mechanical effects are incorporated in terms of a quantum correction of potential in the well-developed particle MC computational techniques. The ellipsoidal multi-valleys of silicon conduction band are also considered in the simulation. First, the validity of the quantum MC technique is verified by comparing the simulated results with a self-consistent Schrödinger-Poisson solution at thermal equilibrium. Then, we apply the technique to non-equilibrium and quasi-ballistic quantum transport in nano-scaled SOI-MOSFETs. |
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