Transport properties of LCMO granular films deposited by the pulsed electron deposition technique |
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Authors: | Leiming Chen Bin Xu Yan Zhang Zhenping Chen |
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Affiliation: | CHEN Leiming 1,XU Bin 2,ZHANG Yan 1,CHEN Zhenping 3 (1.Zhengzhou Institute of Aeronautical Industry Management,Zhengzhou 450015,China,2.North China Institute of Water Conservancy and Hydroelectric Power,Zhengzhou 450011,3.Zhengzhou University of Light Industry,Zhengzhou 450002,China) |
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Abstract: | By finely controlling the deposition parameters in the pulsed electron deposition process, granular La2/3Ca1/3MnO3 (LCMO) film was grown on silicon substrates. The substrate temperature, ambient pressure in the deposition chamber and acceleration
potential for the electron beam were all found to affect the grain size of the film, resulting in different morphologies of
the samples. Transport properties of the obtained granular films, especially the magnetoresistance (MR), were studied. Prominent
low-field MR was observed in all samples, indicating the forming of grain boundaries in the sample. The low-field MR show
great sensitive to the morphology evolution, which reaches the highest value of about 40% for the sample with the grain size
of about 250 nm. More interestingly, positive-MR (p-MR) was also detected above 300 K when low magnetic field applying, whereas it disappeared with higher magnetic field applied
up to 1.5 and 2 Tesla. Instead of the spinpolarized tunneling process being commonly regarded as a responsible reason, lattice
mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR |
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Keywords: | colossal magnetoresistance granular film transport properties |
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