MOS电阻阵的非均匀性测量及补偿方法研究

红外MOS电阻阵列是现代红外成像仿真系统中的关键元件。由于MOS电阻阵具有较强的热非均匀性,因此在进行红外仿真时必须对其进行实时补偿。文中对基于MOS电阻阵的关键技术——MOS电阻阵帧元非均匀性补偿技术进行深入探讨和研究,并提出了相应的解决方案:通过离线测试,实测得到每一帧元的电压温度特性曲线,建立电压温度补偿数据表格,使得驱动MOS热电阻面阵的灰度数据与表格数据相匹配,从而实现对MOS电阻阵的修正。实验证明,文中提出的方法能够很好地解决对MOS电阻阵非均匀特性进行补偿的问题,并已在基于MOS电阻阵的红外场景生成器中应用,取得了满意的效果。

Nonuniformity Characterization and Correction of MOS Resistor Array

In the full paper,we explain in detail our research results on nonuniformity characterization and correction of MOS resistor array;in this abstract ,we just add some pertinent remarks to the two topics of explanation:(1)the causes and characteristics of nonuniformity of infrared images of MOS resistor array and(2)the nonuniformity measurement and compensation algorithm of MOS resistor array;in topic 1,we find that the main causes of the nonuniformity are the nonlinearity of the resistor array and the nonuniformity of background voltage;in topic 2,we measure voltage vs temperature curves by testing MOS resistor array offline and then establish their compensation table(Table 1 in the full paper),whereby each resistor in MOS resistor array can be corrected in real-time so that its gray degree can match the corresponding datum in Table1;also in topic 2,we generate the voltage vs temperature curve for each resistor in the array(a typical curve is shown in Fig 4 in the full paper).Our approach was adopted in a real IR scene projector based on MOS resistor array and the user expresssed satisfaction.