Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

A review is presented of an integrated approach to hardness assurance, embracing single-event and global pulsed-ionization effects. The strategy essentially combines numerical and physical simulation in order to obtain reliable data on IC radiation response with minimum expenditure of time and money. The way in which calculations and measurements should be combined depends on the type of IC and the radiation conditions. It is shown that the cost of measurement can be reduced by using laboratory radiation simulators and each form of radiation of interest can be simulated with an agent readily available for the tester. Particular coverage is given to simulation with lasers.