Novel gate voltage ramping technique for the characterisation of metal-oxide-semiconductor capacitor charge trapping properties

A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1-I/sub g/(t)/I/sub s/(t+ Delta t) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was observed using this technique. A comparison between I and flatband voltage shift, Delta V/sub fb/, indicates that I gives the same information as Delta V/sub fb/ does at high stress fluences.<>