Modelling and Experiment of a Silicon Resonant Pressure Sensor |
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| Authors: | Zheng Cui Deyong Chen Shanhong Xia |
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| Affiliation: | (1) Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK;(2) The State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing, 100080, P.R. China |
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| Abstract: | Modelling of a silicon resonator as a pressure sensor is presented. The resonator is electrothermally excited and the resonance frequency shift is detected by a piezoresistive thin film detector. Computer simulation using the commercial MEMS software tool IntelliSuite is compared with analytical model. Various design aspects, such as the pressure sensitivity, electrothermal heating of vibrating beam, influence of detection current and damping effect are investigated. Silicon resonator sensors have been fabricated and measured. The characteristics predicted by computer simulation has been confirmed by experimental results. |
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| Keywords: | MEMS design silicon resonator pressure sensor computer simulation |
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