| 调制掺杂Al_xGa_(1-x)As/GaAs异质结持久光电导的光谱响应 |
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| 引用本文： | 董谋群,葛惟锟,江丕桓,孙殿照,陈宗圭.调制掺杂Al_xGa_(1-x)As/GaAs异质结持久光电导的光谱响应[J].半导体学报,1988,9(1):92-95. |
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| 作者姓名： | 董谋群 葛惟锟 江丕桓 孙殿照 陈宗圭 |
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| 作者单位： | 中国科学院半导体研究所 北京
(董谋群，葛惟锟，江丕桓，孙殿照)，中国科学院半导体研究所 北京(陈宗圭) |
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| 摘 要： | 本文在77 K下研究了调制掺杂 n-Al_(0.3)Ga_(0.7)As/GaAs异质结持久光电导的光谱响应.结果表明,掺 Cr GaAs衬底中Cr深能级上电子的激发和 Al_xGa_(1-x)As中DX中心的光离化都产生持久光电导.
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| 关 键 词： | 持久光电导 AlGaAs/GaAs异质结 DX中心 |
Spectral Response of Persistent Photoconductivity in Modulation-Doped Al_xGa_(1-x)As/GaAs Heterostructures |
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| Dong Mouqun/Institute of Semiconductors,Academia Sinica,BeijingGe Weikun/Institute of Semiconductors,Academia Sinica,BeijingJiang Pihuan/Institute of Semiconductors,Academia Sinica,BeijingSun Dianzhao/Institute of Semiconductors,Academia Sinica,BeijingCheng Zonggui/Institute of Semiconductors,Academia Sinica,Beijing.Spectral Response of Persistent Photoconductivity in Modulation-Doped Al_xGa_(1-x)As/GaAs Heterostructures[J].Chinese Journal of Semiconductors,1988,9(1):92-95. |
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| Authors: | Dong Mouqun/Institute of Semiconductors Academia Sinica BeijingGe Weikun/Institute of Semiconductors Academia Sinica BeijingJiang Pihuan/Institute of Semiconductors Academia Sinica BeijingSun Dianzhao/Institute of Semiconductors Academia Sinica BeijingCheng Zonggui/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | We have measured the spectral response of persistent photoconductivity (PPC) in modu-lation doped Al_(0.2)Ga_(0.7)As/GaAs heterostructures at low temperature (77 K).The observed twothresholds (0.8 and 1.1 eV) indicate that there are two independent mechanisms responsiblefor PPC.They are (1) electron photoexcitation from Cr deep level in SI GaAs:Cr substrate;(2) photoionization of DX center in AlGaAs. |
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| Keywords: | Persistent photoconductivity AlGaAs/GaAs heterostructure DX center |
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