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On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma |
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| Authors: | Mansu Kim Sun Jin Yun Alexander Efremov |
| Affiliation: | a Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, South Korea b Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, South Korea c Department of Computer and Applied Physics, Hanseo University, Haemi-myun, Seosan-City, Chungnam 356-706, South Korea d Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F.Engels St., 153000 Ivanovo, Russia |
| Abstract: | The etching mechanism of ZrO2 thin films in BCl3/Ar plasma was investigated using a combination of experimental and modeling methods. It was found that an increase in the Ar mixing ratio causes the non-monotonic behavior of the ZrO2 etch rate which reaches a maximum of 41.4 nm/min at about 30-35% Ar. Langmuir probe measurements and plasma modeling indicated the noticeable influence of a BCl3/Ar mixture composition on plasma parameters and active species kinetics that results in non-linear changes of both densities and fluxes for Cl, BCl2 and  . From the model-based analysis of surface kinetics, it was shown that the non-monotonic behavior of the ZrO2 etch rate can be associated with the concurrence of chemical and physical pathways in ion-assisted chemical reaction. |
| Keywords: | ZrO2 Etch rate Dissociation Ionization Etch mechanism BCl3/Ar plasma modeling |
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