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Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2 |
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| Authors: | Kazuo Tsutsui Ruifei Xiang Takashi Shiozawa Yasutoshi Okuno Masafumi Kubota Hiroshi Iwai |
| Affiliation: | a Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-69, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan b Frontier Collaborative Research Center, Tokyo Institute of Technology, J2-68, 4259 Nagatsuta, Midoriku, Yokohama 226-8503, Japan c ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co. Ltd., 19 Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413, Japan |
| Abstract: | The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750-775 °C as a result of agglomeration related to phase transition from NiSi to NiSi2. Experiments on the effect of temperature, heating rate and annealing duration in rapid thermal annealing revealed that the high-resistance state produced by annealing at the critical temperature could not be changed by subsequent annealing at higher temperature, and that the high-resistance state required 30-40 s at the critical temperature to form. Pre-annealing at 600 °C was found to suppress the later formation of the high-resistance state. |
| Keywords: | Ni silicide Thermal stability Agglomeration Phase transition Sheet resistance |
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