Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures |
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Authors: | ? Aydo?an M Sa?lam A Türüt |
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Affiliation: | Faculty of Sciences and Arts, Department of Physics, University of Atatürk, 25240 Erzurum, Turkey |
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Abstract: | The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current-voltage measurements. According to the C-V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal. |
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Keywords: | Polyaniline Series resistance Schottky contact Current-voltage characteristics Organic/inorganic junction |
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