Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures |
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Authors: | A. Tataro?lu,?. Yü ceda?,?. Altindal |
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Affiliation: | Physics Department, Faculty of Arts and Sciences, Gazi University, Teknikokullar, 06500 Ankara, Turkey |
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Abstract: | Dielectric properties and ac electrical conductivity of the Al/SiO2/p-Si (MIS) Schottky diodes were studied in the frequency and temperature range of 10 kHz-1 MHz and 300-400 K, respectively. Experimental results show that the dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ), ac electrical conductivity (σac) and the electric modulus were found a strong function of frequency and temperature. The values of the ε′, ε″ and tan δ decrease with increasing frequencies due to the interface states capacitance and a decrease in conductance with increasing frequency. Also, these values increase with increasing temperature. The σac is found to increase with increasing frequency and increasing temperature. The variation of conductivity as a function of temperature and frequency reveals non-adiabatic hopping of charge carriers between impurities localized states. In addition, the experimental dielectric data have been analyzed by considering electric modulus formalism. |
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Keywords: | MIS type Schottky diode Dielectric properties Ac electrical conductivity Electric modulus |
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